| PART |
Description |
Maker |
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| CY27H010-30ZC CY27H010-35JC CY27H010-35WMB CY27H01 |
128K x 8 High-Speed CMOS EPROM
128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 35 ns, PQCC32
128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 35 ns, PDSO32
128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 30 ns, PDIP32
128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 30 ns, PQCC32
From old datasheet system
|
Cypress Semiconductor, Corp.
Atmel, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| A63L7332 A63L7332E-42 A63L7332E-45 A63L7332E-5 A63 |
128K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
4.2ns 128K x 32bit synchronous high speed SRAM
4.5ns 128K x 32bit synchronous high speed SRAM
|
AMIC Technology Corporation
|
| W24010AC |
128K×8 High-Speed CMOS Static RAM(128K×8位高速CMOS静态RAM) 8 × 128K的高速CMOS静态RAM28K的8位高速的CMOS静态RAM）的
|
Winbond Electronics, Corp.
|
| IS61C1024 IS61C1024-12H IS61C1024-12HI IS61C1024-1 |
RES POWER .050 OHM 2W 1% SMT 128K X 8 STANDARD SRAM, 15 ns, PDSO32
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 20 ns, PDSO32
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 25 ns, PDSO32
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32
IC-1MB FAST SRAM 128K X 8 STANDARD SRAM, 15 ns, PDIP32
RES POWER .030 OHM 2W 5% SMT
RES POWER .020 OHM 2W 5% SMT
|
Integrated Silicon Solution, Inc.
ETC[ETC]
Integrated Silicon Solution Inc
|
| IS63LV1024-8KL IS63LV1024L-10HL IS63LV1024L-10KLI |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Integrated Silicon Solution, Inc.
|
| IS61LV12816LL-12T IS61LV12816LL-12BI IS61LV12816LL |
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PQFP44
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit）（4分位，写延迟LVTTL高速同步静态随机存储器28K的36位）
4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发（HSTL）、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速（128K的x 36Bit）（4分位，写延迟，高速逻辑收发（HSTL），高速同步静态随机存储器28K的36位）同步静态存储器
|
Sony, Corp.
|
| AT28C010E-12JC AT28C010E-12PC AT28C010E-12TI AT28C |
1 Megabit 128K x 8 Paged CMOS E2PROM
Quadruple Bilateral Analog Switch 14-SOIC -40 to 85
High Speed CMOS Logic Triple 3-Input OR Gates 14-TSSOP -55 to 125 128K X 8 EEPROM 5V, 150 ns, PDIP32
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 128K X 8 EEPROM 5V, 150 ns, PQCC32
High Speed CMOS Logic Triple 3-Input OR Gates 14-TSSOP -55 to 125 128K X 8 EEPROM 5V, 150 ns, PQCC32
64K 8K x 8 Battery-Voltage CMOS E2PROM 128K X 8 EEPROM 5V, 200 ns, PDSO32
High Speed CMOS Logic Triple 3-Input OR Gates 14-TSSOP -55 to 125 128K X 8 EEPROM 5V, 120 ns, PDIP32
Quadruple Bilateral Analog Switch 14-SSOP -40 to 85 128K X 8 EEPROM 5V, 150 ns, PDSO32
|
Atmel Corp.
Atmel, Corp.
|
| A63L73321E-10 A63L73321E-9.5 |
10ns 128K x 32bit synchronous high speed SRAM
9.5ns 128K x 32bit synchronous high speed SRAM
|
AMIC Technology
|
| KM681001A KM681001A-15 KM681001A-20 |
128K x 8 Bit High-Speed CMOS Static RAM
128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.
From old datasheet system
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
